Summary

半導体中の深い不純物準位の性質とその測定［完］－3．Si，GaAs，GaP中の不純物準位とデバイス特性－

生駒俊明 奥村次徳 

Vol.64 No.3 pp.279-286

Publication Date:1981/03/01

Online ISSN:2188-2355

Print ISSN:0913-5693

Type of Manuscript:Lecture Series

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Online ISSN:2188-2355