Summary

4ギガビットAG-AND型フラッシュメモリ用メモリセル技術を開発－世界最小のセル面積と最速の書込み速度を実現－

The Institute of Electronics,Information and Communication Engineers 

Vol.87 No.4 pp.347-348

Publication Date:2004/04/01

Online ISSN:2188-2355

Print ISSN:0913-5693

Type of Manuscript:News Commentary

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Online ISSN:2188-2355