Summary

世界初， 窒化ガリウム（GaN）縦型トランジスタを開発 ──GaN 系パワートランジスタの低コスト化を実現──

The Institute of Electronics,Information and Communication Engineers 

Vol.89 No.10 pp.925-926

Publication Date:2006/10/01

Online ISSN:2188-2355

Print ISSN:0913-5693

Type of Manuscript:News Commentary

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Online ISSN:2188-2355