CMOSゲート界面の原子1層のひずみを世界で初めて測定-ひずみ測定精度0.005を達成-
The Institute of Electronics,Information and Communication Engineers
Vol.86 No.12 pp.976-976
Publication Date:2003/12/01
Online ISSN:2188-2355
Print ISSN:0913-5693
Type of Manuscript:News Commentary
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