Summary

受信用超低雑音・低ひずみ・高耐圧GaN系ヘテロ接合電界効果トランジスタを開発

The Institute of Electronics,Information and Communication Engineers 

Vol.86 No.5 pp.375-375

Publication Date:2003/05/01

Online ISSN:2188-2355

Print ISSN:0913-5693

Type of Manuscript:News Commentary

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Online ISSN:2188-2355