受信用超低雑音・低ひずみ・高耐圧GaN系ヘテロ接合電界効果トランジスタを開発
The Institute of Electronics,Information and Communication Engineers
Vol.86 No.5 pp.375-375
Publication Date:2003/05/01
Online ISSN:2188-2355
Print ISSN:0913-5693
Type of Manuscript:News Commentary
Category:
Keyword:
---
Full Text:PDF(332.8KB)>>
Summary: