0.11μm CMOSプロセス技術を用いて世界で初めて5GHz帯低雑音増幅器の開発に成功
The Institute of Electronics,Information and Communication Engineers
Vol.87 No.10 pp.908-909
Publication Date:2004/10/01
Online ISSN:2188-2355
Print ISSN:0913-5693
Type of Manuscript:News Commentary
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