Summary

新しい量子力学計算により、正孔移動度の基盤面方位、電流方向、電圧、不純物濃度、ひずみの依存性を予測－CMOS設計用に移動度の早見図をも提供－

The Institute of Electronics,Information and Communication Engineers 

Vol.87 No.11 pp.991-992

Publication Date:2004/11/01

Online ISSN:2188-2355

Print ISSN:0913-5693

Type of Manuscript:News Commentary

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Online ISSN:2188-2355