4ギガビットAG-AND型フラッシュメモリ用メモリセル技術を開発-世界最小のセル面積と最速の書込み速度を実現-
The Institute of Electronics,Information and Communication Engineers
Vol.87 No.4 pp.347-348
Publication Date:2004/04/01
Online ISSN:2188-2355
Print ISSN:0913-5693
Type of Manuscript:News Commentary
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Keyword:
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