スケーラブルな二重接合フラッシュメモリ-トンネル膜厚2.7nmに,大容量化へ道-
The Institute of Electronics,Information and Communication Engineers
Vol.88 No.4 pp.298-301
Publication Date:2005/04/01
Online ISSN:2188-2355
Print ISSN:0913-5693
Type of Manuscript:News Commentary
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