世界初, 窒化ガリウム(GaN)縦型トランジスタを開発 ──GaN 系パワートランジスタの低コスト化を実現──
The Institute of Electronics,Information and Communication Engineers
Vol.89 No.10 pp.925-926
Publication Date:2006/10/01
Online ISSN:2188-2355
Print ISSN:0913-5693
Type of Manuscript:News Commentary
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