IEICE journal - Development of Normally-off GaN HEMT for Power Electronics Devices

Summary

Development of Normally-off GaN HEMT for Power Electronics Devices

Vol.92 No.12 pp.1079-1080

Publication Date:2009/12/01

Online ISSN:2188-2355

Print ISSN:0913-5693

Type of Manuscript:News Analysis

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Keyword:
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Special Issue:
Technology and Innovation in the Olympic and Paralympic Games Tokyo 2020

Online ISSN:2188-2355