IEICE journal - Development of Spin-based MOSFET:Demonstration of Read/Write Operations and Its Endurance in Spin-based MOSFET

Summary

Development of Spin-based MOSFET:Demonstration of Read/Write Operations and Its Endurance in Spin-based MOSFET

Technical Topics Committee

Vol.93 No.5 pp.430-431

Publication Date:2010/05/01

Online ISSN:2188-2355

Print ISSN:0913-5693

Type of Manuscript:News Analysis

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Special Issue:
Technology and Innovation in the Olympic and Paralympic Games Tokyo 2020

Online ISSN:2188-2355