IEICE journal - Development of SiC Power MOSFET with AlON High-kGate Dielectrics : Overcoming the Reliability Challenge

Summary

Development of SiC Power MOSFET with AlON High-kGate Dielectrics : Overcoming the Reliability Challenge

Technical Topics Committee

Vol.96 No.5 pp.371-372

Publication Date:2013/05/01

Online ISSN:2188-2355

Print ISSN:0913-5693

Type of Manuscript:News Analysis

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Special Issue:
Technology and Innovation in the Olympic and Paralympic Games Tokyo 2020

Online ISSN:2188-2355