Summary

Development of TRAM-New Phase Change Memory Devices : Realization of High Speed Operation, Low Power Consumption and High Reliability by Using New Super Lattice Structures of GeTe/Sb2Te3

Masumi YAMAGUCHI 

Vol.98 No.1 pp.63-65

Publication Date:2015/01/01

Online ISSN:2188-2355

Print ISSN:0913-5693

Type of Manuscript:News Commentary

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Online ISSN:2188-2355