Development of TRAM-New Phase Change Memory Devices : Realization of High Speed Operation, Low Power Consumption and High Reliability by Using New Super Lattice Structures of GeTe/Sb2Te3
Vol.98 No.1 pp.63-65
Publication Date:2015/01/01
Online ISSN:2188-2355
Print ISSN:0913-5693
Type of Manuscript:News Commentary
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